Electronic states and optical properties of silicon nanocrystals terminated by dimers

Solid State Communications

Volumn 116, Issue 12, 2000, Pages 655-659

  Nishida, M ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIMERS; LUMINESCENCE OF SOLIDS; NANOSTRUCTURED MATERIALS; POROUS SILICON;

NONORTHOGONAL TIGHT BINDING METHODS;

SEMICONDUCTING SILICON;

EID: 0034324227     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00407-5     Document Type: Article

References (33)

1. Canham L.T. Appl. Phys. Lett. 57:1990;1046.
2. Collins R.T., Fauchet P.M., Tischler M.A. Phys. Today. 50:1997;24.
3. Cullis A.G., Canham L.T., Calcott P.D.J. J. Appl. Phys. 82:1997;909.
4. Xie Y.H., et al. J. Appl. Phys. 71:1992;2403.
5. Hao P.H., Hou X.Y., Zhang F.L., Wang X. Appl. Phys. Lett. 64:1994;3602.
6. Matsumoto T., Arata G., Nair S.V., Masumoto Y. Jpn. J. Appl. Phys., Part 1. 38:1999;589.
7. Koch F., Petrova-Koch V., Muschik T. J. Lumin. 57:1993;271.
8. Li K.-H., Tsai C., Sarathy J., Campbell J.C. Appl. Phys. Lett. 62:1993;3192.
9. Xie Y.H., et al. Phys. Rev. B. 49:1994;5386.
10. Dubin V.M., Ozanam F., Chazalviel J.-N. Phys. Rev. B. 50:1994;14867.
11. Wadayama T., Arigane T., Hatta A. Appl. Phys. Lett. 73:1998;2570.
12. Lee W.H., Lee C., Kwon Y.H., Hong C.Y., Cho H.Y. Solid State Commun. 113:2000;519.
13. Sakurai T., Hagstrum H.D. Phys. Rev. 14:1976;1593.
14. Nishida M. Phys. Rev. B. 58:1998;7103.
15. Nishida M. Phys. Rev. B. 59:1999;15789.
16. Nishida M. Phys. Rev. B. 60:1999;8902.
17. Kratzer P., Hammer B., Norskov J.K. Phys. Rev. B. 51:1995;13432.
18. Basu P.K. Theory of Optical Processes in Semiconductors. 1997;Oxford University Press, New York. p. 211.
19. Delley B., Steigmeier E.F. Phys. Rev. B. 47:1993;1397.
20. Delerue C., Allan G., Lannoo M. Phys. Rev. B. 48:1993;11024.
21. Wang L.W., Zunger A. J. Phys. Chem. 98:1994;2158.
22. M. Nishida, published in Japanese.
23. Ren S.Y., Dow J.D. Phys. Rev. B. 45:1992;6492.
24. Huaxing F., Ling Y., Xide X. Phys. Rev. B. 48:1993;10978.
25. Uda T., Hirao M. J. Phys. Soc. Jpn. 63:(Suppl. B):1994;97.
26. Kumar R., Kitoh Y., Hara K. Appl. Phys. Lett. 63:1993;3032.
27. Hybertsen M.S. Phys. Rev. Lett. 72:1994;1514.
28. Hill N.A., Whaley K.B. Phys. Rev. Lett. 75:1995;1130.
29. Allan G., Delerue C., Lannoo M. Phys. Rev. Lett. 76:1996;2961.
30. Wolkin M.V., Jorne J., Fauchet P.M., Allan G., Delerue C. Phys. Rev. Lett. 82:1999;197.
31. Reboredo F.A., Franceschetti A., Zunger A. Appl. Phys. Lett. 75:1999;2972.
32. Gupta P., Colvin V.L., George S.M. Phys. Rev. B. 37:1988;8234.
33. Ogata Y.H., Kato F., Tsuboi T., Sakka T. J. Electrochem. Soc. 145:1998;2439.