Formation of a quasi-two-dimensional electron gas in GaN/AlxGa1-xN heterostructures with diffuse interfaces

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1843-1848

  Mkhoyan, K A ^a   Silcox, J ^a   Yu, Z ^b   Schaff, W J ^a   Eastman, L F ^a  

^a Department of Materials Science and Engineering   (United States)

^b Department of Population Medicine and Diagnostic Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; LOCAL DENSITY APPROXIMATION; QUASI TWO DIMENSIONAL ELECTRON GAS; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 1542276723     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641148     Document Type: Article

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