Aging effects in microcrystalline silicon films studied by transient photoconductivity

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 421-424

  Smirnov, V ^a   Reynolds, S ^a   Main, C ^a   Finger, F ^b   Carius, R ^b  

^a UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; AGING OF MATERIALS; ANNEALING; BORON; CARRIER CONCENTRATION; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GRAIN BOUNDARIES; OXIDATION; PHOTOCONDUCTIVITY; PRESSURE EFFECTS; SILICON;

DARK CONDUCTIVITY; MICROCRYSTALLINE SILICON FILMS; PHOTOCARRIERS; TRANSIENT PHOTOCONDUCTIVITY;

CRYSTALLINE MATERIALS;

EID: 2942615078     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.010     Document Type: Conference Paper

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