Polarization comparison of Pb(Zr,Ti)O3 and Bi4Ti 3O12-based ferroelectrics

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 23-27

  Funakubo, Hiroshi ^a,b   Watanabe, Takayuki ^a   Morioka, Hitoshi ^a   Nagai, Atsushi ^a   Oikawa, Takahiro ^a   Suzuki, Muneyasu ^a   Uchida, Hiroshi ^c   Kouda, Seiichiro ^c   Saito, Keisuke ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SOPHIA UNIVERSITY   (Japan)

^d BRUKER AXS INC   (United States)

Author keywords

Epitaxial films; Ferroelectric random access memory; Piezoelectric material; Remanent polarization; Spontaneous polarization

Indexed keywords

BISMUTH COMPOUNDS; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRIC MATERIALS; POLARIZATION; RANDOM ACCESS STORAGE; TEMPERATURE DISTRIBUTION; THIN FILMS; TITANIUM OXIDES;

EPITAXIAL FILMS; FERROELECTRIC RANDOM ACCESS MEMORY; REMANENT POLARIZATION; SPONTANEOUS POLARIZATION;

LEAD COMPOUNDS;

EID: 15344343223     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.087     Document Type: Conference Paper

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