Effect of La substitution on electrical properties of highly oriented Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 166-169

  Sakai, Tomohiro ^a   Watanabe, Takayuki ^a   Funakubo, Hiroshi ^a   Saito, Keisuke ^b   Osada, Minoru ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Bi4Ti3O12; Bismuth layer structural ferroelectrics; Epitaxial thin film; Ferroelect ricity; MOCVD; Substitution

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTROMAGNETIC WAVE POLARIZATION; EPITAXIAL GROWTH; FERROELECTRICITY; FILM PREPARATION; LANTHANUM; MAGNETIC HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTITUTION REACTIONS; X RAY DIFFRACTION ANALYSIS;

BISMUTH TITANIUM OXIDES; LEAKAGE CURRENT DENSITY; SPONTANEOUS POLARIZATION;

BISMUTH COMPOUNDS;

EID: 0038343591     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.166     Document Type: Article

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