SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 338-342

Silicon nanowires fabricated by means of an underetching technique

(6) Ciucci, S a D'Angelo, F a Diligenti, A a Pellegrini, B a Pennelli, G a Piotto, M b

a UNIVERSITY OF PISA (Italy)

b CNR (Italy)

Author keywords

E beam lithography; Nanowires; Silicon micromachining

Indexed keywords

BOLOMETERS; DRY ETCHING; ELECTRIC POTENTIAL; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; LEAKAGE CURRENTS; POLYMETHYL METHACRYLATES; RESISTORS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS;

E-BEAM LITHOGRAPHY; NANOELECTRONIC DEVICES; NANOWIRES; SILICON MICROMACHINING;

NANOTECHNOLOGY;

EID: 14944376696 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2004.12.044 Document Type: Article

Times cited : (17)

References (15)

1
- 0141788990
- A.T. Tilke, F.C. Simmel, H. Lorenz, R.H. Blick, and J.P. Kotthaus Phys. Rev. B 68 2003 075311 075316
- (2003) Phys. Rev. B , vol.68 , pp. 075311-075316
- Tilke, A.T.¹ Simmel, F.C.² Lorenz, H.³ Blick, R.H.⁴ Kotthaus, J.P.⁵

2
- 0037123565
- S.F. Hu, W.Z. Wong, S.S. Liu, Y.C. Wu, C.L. Sung, T.Y. Huang, and T.J. Yang Adv. Mater. 14 2002 736 739
- (2002) Adv. Mater. , vol.14 , pp. 736-739
- Hu, S.F.¹ Wong, W.Z.² Liu, S.S.³ Wu, Y.C.⁴ Sung, C.L.⁵ Huang, T.Y.⁶ Yang, T.J.⁷

3
- 0001707398
- R.A. Smith, and H. Ahmed J. Appl. Phys. 81 1997 2699 2703
- (1997) J. Appl. Phys. , vol.81 , pp. 2699-2703
- Smith, R.A.¹ Ahmed, H.²

4
- 0033133111
- R. Augke, W. Eberhardt, S. Strähle, F.E. Prins, and D.P. Kern Microelectron. Eng. 46 1999 141 144
- (1999) Microelectron. Eng. , vol.46 , pp. 141-144
- Augke, R.¹ Eberhardt, W.² Strähle, S.³ Prins, F.E.⁴ Kern, D.P.⁵

5
- 0038305952
- A.T. Tilke, L. Pescini, H. Lorenz, and R.H. Blick Appl. Phys. Lett. 82 2003 3773 3775
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3773-3775
- Tilke, A.T.¹ Pescini, L.² Lorenz, H.³ Blick, R.H.⁴

6
- 0035902938
- Y. Cui, Q. Wei, H. Park, and C.M. Lieber Science 293 2001 1289 1292
- (2001) Science , vol.293 , pp. 1289-1292
- Cui, Y.¹ Wei, Q.² Park, H.³ Lieber, C.M.⁴

7
- 0001114414
- S.W. Chung, J.Y. Yu, and J.R. Heath Appl. Phys. Lett. 76 2000 2068 2070
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2068-2070
- Chung, S.W.¹ Yu, J.Y.² Heath, J.R.³

8
- 0033737136
- Y. Cui, X. Duan, J. Hu, and C.M. Lieber J. Phys. Chem. B 104 2000 5213 5216
- (2000) J. Phys. Chem. B , vol.104 , pp. 5213-5216
- Cui, Y.¹ Duan, X.² Hu, J.³ Lieber, C.M.⁴

9
- 0031221439
- H. Namatsu, S. Horiguchi, M. Nagase, and K. Kurihara J. Vac. Sci. Technol. B 15 1997 1688 1696
- (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1688-1696
- Namatsu, H.¹ Horiguchi, S.² Nagase, M.³ Kurihara, K.⁴

10
- 0001127448
- H. Namatsu, K. Kurihara, M. Nagase, and T. Makino Appl. Phys. Lett. 70 1997 619 621
- (1997) Appl. Phys. Lett. , vol.70 , pp. 619-621
- Namatsu, H.¹ Kurihara, K.² Nagase, M.³ Makino, T.⁴

11
- 0000680989
- A. Potts, D.G. Hasko, J.R.A. Cleaver, and H. Ahmed Appl. Phys. Lett. 52 1988 834 835
- (1988) Appl. Phys. Lett. , vol.52 , pp. 834-835
- Potts, A.¹ Hasko, D.G.² Cleaver, J.R.A.³ Ahmed, H.⁴

12
- 1442285850
- S.F. Hu, W.C. Weng, and Y.M. Wan Solid State Commun. 130 2004 111 114
- (2004) Solid State Commun. , vol.130 , pp. 111-114
- Hu, S.F.¹ Weng, W.C.² Wan, Y.M.³

13
- 0035998504
- B. Legrand, D. Deresmes, and D. Stievenard J. Vac. Sci. Technol. B 20 2002 862 870
- (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 862-870
- Legrand, B.¹ Deresmes, D.² Stievenard, D.³

14
- 0001704978
- H. Fujii, S. Kanemaru, T. Matsukawa, H. Hiroshima, H. Yokoyama, and J. Itoh Jpn. J. Appl. Phys. 37 1998 7182 7185
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 7182-7185
- Fujii, H.¹ Kanemaru, S.² Matsukawa, T.³ Hiroshima, H.⁴ Yokoyama, H.⁵ Itoh, J.⁶

15
- 0042768108
- G. Pennelli, F. D'Angelo, M. Piotto, G. Barillaro, and B. Pellegrini Rev. Sci. Instrum. 74 2003 3579 3582
- (2003) Rev. Sci. Instrum. , vol.74 , pp. 3579-3582
- Pennelli, G.¹ D'Angelo, F.² Piotto, M.³ Barillaro, G.⁴ Pellegrini, B.⁵

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