Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

Solid State Communications

Volumn 130, Issue 1-2, 2004, Pages 111-114

  Hu, S F ^a   Weng, W C ^b   Wan, Y M ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

Author keywords

A. Nanostructures; B. Nanofabrications

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; GATES (TRANSISTOR); NANOTECHNOLOGY; PLASMA THEORY; POLYSILICON; QUANTUM THEORY; THERMAL EFFECTS;

NANOWIRE STRUCTURES; TRANSFORMER COUPLED PLASMA (TCP);

NANOSTRUCTURED MATERIALS;

EID: 1442285850     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.01.015     Document Type: Article

References (10)

1. Zhuang L., Guo L., Chou S.Y. Appl. Phys. Lett. 72:1998;1205.
2. Ishikuro H., Hiramoto T. Appl. Phys. Lett. 71:1997;3691.
3. Ishikuro H., Fujii T., Saraya T., Hashiguchi G., Hiramoto T., Ikoma T. Appl. Phys. Lett. 68:1996;3585.
4. Takahashi N., Ishikuro H., Hiramoto T. Appl. Phys. Lett. 76:2000;209.
5. Stone N.J., Ahmed H. Electron. Lett. 35:1999;1883.
6. Ono Y., Takahashi Y., Yamazaki K., Nagase M., Namatsu H., Kurihara K., Muras K. Appl. Phys. Lett. 76:2000;3121.
7. Nakajama A., Futatsugi T., Kosemura K., Fukano T., Yokoyama N. Appl. Phys. Lett. 70:1997;1742.
8. Irvine A.C., Durrani Z.A.K., Ahmed H. J. Appl. Phys. 87:2000;8594.
9. Liu K., Avouris P., Bucchignano J., Martel R., Sun S. Appl. Phys. Lett. 80:2002;865.
10. Durrani Z.A.K., Kamiya T., Tan Y.T., Ahmed H., Lloyd N. Microelectronic Engng. 63:2002;267-275.