Fabrication of a nanometer-scale Si-wire by micromachining of a silicon-on-insulator substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7182-7185

  Fujii, Hideo ^b   Kanemaru, Seigo ^a   Matsukawa, Takashi ^a   Hiroshima, Hiroshi ^a   Yokoyama, Hiroshi ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

Micromachining; Quantum wire; Reactive ion etching; Silicon on insulator substrate; SOI

Indexed keywords

EID: 0001704978     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7182     Document Type: Article

References (3)

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3. M. Ben-Chorin, A. Kux and I. Schechter: Appl. Phys. Lett. 64 (1994) 481.