Fabrication and characterization of Coulomb blockade devices in silicon

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 141-144

  Augke, R ^a   Eberhardt, W ^a   Strahle S ^a   Prins, F E ^a   Kern, D P ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TUNNELING; ENERGY GAP; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

COULOMB BLOCKADE DEVICES;

MOSFET DEVICES;

EID: 0033133111     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00038-6     Document Type: Article

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