Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 78-79

  Vancaillie, L ^a   Kilchytska, V ^a   Delatte, P ^c   Demeus L ^c   Matsuhashi, H ^b   Ichikawa, F ^b   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

KINK EFFECT;

MOSFET DEVICES;

EID: 0142154788     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242906     Document Type: Conference Paper

References (6)

1. J. Pretet et al., proc. of ESSDERC, 2002, p.515.
2. A. Mercha et al., proc. of Int ECS SOI symp., 2003, p.319.
3. D. Flandre et al., Solid-State Electronics, 45 (2001) 541-549.
4. L. Vancaillie et al., proc. of HiTec, 2002, pp. 10-17.
5. G. Reichert et al., Sol.-St. Electron., 39 (1996), p.1347-1352.
6. nd edition, 1997.