2-GHz RF front-end circuits in CMOS/SIMOX operating at an extremely low voltage of 0.5 V

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 12, 2000, Pages 2000-2004

  Harada, Mitsuru ^a   Tsukahara, Tsuneo ^a   Kodate, Junichi ^a   Yamagishi, Akihiro ^a   Yamada, Junzo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); MOSFET DEVICES; THIN FILMS; VARIABLE FREQUENCY OSCILLATORS;

LOW NOISE AMPLIFIERS; STACKING TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0034476162     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.890316     Document Type: Article

References (3)

1. M. Harada, T. Tsukahara, and J. Yamada, "0.5-1-V 2-GHz RF front-end circuits in CMOS/SIMOX," in ISSCC Dig. Tech. Papers, 2000, pp. 378-379.
2. Y. Ohtomo et al., "A low-power multi-gigabit CMOS/SIMOX LSI design using two power-supply voltages," in Symp. VLSI Circuits Dig., Jun. 1999, C3-3, pp. 25-26.
3. P. R. Gray and R. G. Meyer, "MOS amplifier design," in Analysis and Design of Analog Integrated Circuits, 2nd ed. New York: Wiley, 1983.