Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1429-1437

  Herrera Gomez A ^a,b   Rousseau, P M ^c   Woicik, J C ^d   Kendelewicz, T ^b   Plummer, J ^c   Spicer, W E ^b  

^a UNIVERSIDAD AUTÓNOMA DE QUERÉTARO   (Mexico)

^b STANFORD UNIVERSITY   (United States)

^c Stanford University   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL LATTICES; FOURIER TRANSFORMS; HALL EFFECT; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

INTERFACE STRESS; LATTICE COMPRESSION; SILICON CRYSTALS; X RAY STANDING WAVE SPECTROSCOPY;

X RAY SPECTROSCOPY;

EID: 0033070971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369274     Document Type: Article

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