Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 6215-6217

  Lulli, G ^a   Albertazzi, E ^a   Bianconi, M ^a   Ferri, M ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DOPING (ADDITIVES); LATTICE CONSTANTS; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY;

ION IRRADIATION;

ARSENIC;

EID: 0242636794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616632     Document Type: Article

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