Simulation of the EUV spectrum of Xe and Sn plasmas

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 6, 2004, Pages 1307-1314

  Sasaki, Akira ^a   Nishihara, Katsunobu ^b   Koike, Fumihiro ^c   Kagawa, Takashi ^d   Nishikawa, Takeshi ^e   Fujima, Kazumi ^f   Kawamura, Tohru ^g   Furukawa, Hiroyuki ^g  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c KITASATO UNIVERSITY   (Japan)

^d NARA WOMEN'S UNIVERSITY   (Japan)

^e OKAYAMA UNIVERSITY   (Japan)

^f UNIVERSITY OF YAMANASHI   (Japan)

^g INSTITUTE FOR LASER TECHNOLOGY   (Japan)

Author keywords

Atomic process; Atomic structure; Extreme ultraviolet (EUV); Laser plasma interaction; Lithography; Opacity; Plasma spectroscopy; Radiative transfer; Simulation; Sn; Xe

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; EMISSION SPECTROSCOPY; LASER PRODUCED PLASMAS; LIGHT POLARIZATION; LITHOGRAPHY; MATHEMATICAL MODELS; OPACITY; PARAMETER ESTIMATION; PLASMAS; TIN;

ATOMIC PROCESS; EXTREME ULTRAVIOLET (EUV); LASER PLASMA INTERACTIONS; PLASMA SPECTROSCOPY; RADIATIVE TRANSFER;

XENON;

EID: 13844296711     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.838081     Document Type: Article

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