Soft breakdown in ultrathin SiO2 layers: The conduction problem from a new point of view

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2223-2226

  Miranda, Enrique ^a,b   Suñé, Jordi ^a   Rodríguez, Rosana ^a   Nafría, Montserrat ^a   Martín, Ferran ^a   Aymerich, Xavier ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

Breakdown; Oxide; Point contact; Quasi breakdown; Sharvin contact; Silicon dioxide; Soft breakdown; Stress induced leakage current

Indexed keywords

EID: 0001472277     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2223     Document Type: Article

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