Evolution of the defect structure in helium implanted SiGe/Si heterostructures investigated by in situ annealing in a transmission electron microscope

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Hueging, N ^a   Luysberg, M ^a   Urban, K ^a   Buca, D ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); CHEMICAL VAPOR DEPOSITION; HELIUM; INTERFACES (MATERIALS); ION IMPLANTATION; RELAXATION PROCESSES; TRANSMISSION ELECTRON MICROSCOPY;

BUBBLE STRUCTURES; DEFECT STRUCTURES; DISLOCATION DENSITY; THREADING DISLOCATIONS;

HETEROJUNCTIONS;

EID: 13744255767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852705     Document Type: Article

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