Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Deenapanray, P N K ^a   Petravic, M ^a   Jagadish, C ^a   Krispin, M ^b   Auret, F D ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; EPITAXIAL LAYERS; IMPURITY-FREE DISORDERING (IFD); SPIN-ON-GLASS (SOG);

CAPACITANCE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; DIFFUSION; DOPING (ADDITIVES); EPITAXIAL GROWTH; IMPURITIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 13644282497     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846140     Document Type: Article

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