Smooth and vertical etching of GaAs/GaInP/AlGaInP using inductively coupled Cl2/BCl3/CH4 plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 8304-8307

  Hao, Zhibiao ^a   Han, Shuo ^a   Ren, Fan ^a   Xiong, Bing ^a   Sun, Changzheng ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

AlGaInP; Etch profile; ICP; Ridge rib structures; Self masking

Indexed keywords

BORON COMPOUNDS; CHLORINE; ETCHING; FABRICATION; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; METHANE; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS;

ALGAINP; ETCH PROFILE; RIDGE/RIB STRUCTURES; SELF-MASKING; VERTICAL ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 13644281985     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.8304     Document Type: Article

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