Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes

IEEE Journal of Quantum Electronics

Volumn 40, Issue 4, 2004, Pages 349-353

  Ben, Yu ^a   Sun, Changzheng ^a   Xue, Song ^a   Luo, Yi ^a   Yagi, Tetsuya ^b   Omura, Etsuji ^b  

^a TSINGHUA UNIVERSITY   (China)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

AlGaInP laser diode; High power; Kink; Narrow pulse condition

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; HIGH POWER LASERS; LASER PULSES; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE; TEMPERATURE DISTRIBUTION;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; KINK; POWER-CURRENT CHARACTERISTICS; PULSE DURATION DEPENDENCE; SPATIAL HOLE BURNING;

SEMICONDUCTOR LASERS;

EID: 1942521085     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.825118     Document Type: Article

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