Low-threshold GaInP/AlGaInP ridge waveguide lasers

Electronics Letters

Volumn 33, Issue 20, 1997, Pages 1707-1708

  Kuhn, J ^a   Geng, C ^a   Scholz, F ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Ridge waveguides; Semiconductor junction lasers

Indexed keywords

DRY ETCHING; ELECTRIC CURRENTS; LASER MODES; MASKS; MIRRORS; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

RIDGE WAVEGUIDE LASERS; SINGLE TRANSVERSE MODE OPERATION; WET ETCHING;

QUANTUM WELL LASERS;

EID: 0031223528     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971165     Document Type: Article

References (5)

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4. SUN, D., TREAT, D.W., and BOUR, D.P.: 'High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode', Electron. Lett., 1996, 32, pp. 1488-1490
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