Analysis of bias stress on unpassivated hydrogenated amorphous silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1548-1553

  Slade, Holly Claudia ^a,b   Shur, Michael S ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c Technology Transfer Department   (United States)

Author keywords

Amorphous semiconductors; Flat panel displays; Semiconductor defects; Semiconductor device measurements; Semiconductor devices; Transistors

Indexed keywords

AMORPHOUS MATERIALS; COMPUTER SIMULATION; CRYSTAL DEFECTS; GATES (TRANSISTOR); SEMICONDUCTOR MATERIALS; STRESSES;

FLAT-PANEL DISPLAYS;

TRANSISTORS;

EID: 0032121850     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701487     Document Type: Article

References (16)

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