Influence of the density of states and series resistance on the field-effect activation energy in a-Si:H TFT

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 77-83

  Chen, Chun ying ^a   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); MATHEMATICAL MODELS; THERMAL EFFECTS;

DRAIN SERIES RESISTANCE; DRAIN SOURCE CURRENT; GATE SOURCE BIAS; HYDROGENATED AMORPHOUS SILICON; TWO DIMENSIONAL SIMULATION MODELS;

THIN FILM TRANSISTORS;

EID: 0030399822     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-77     Document Type: Conference Paper

References (12)