Investigation of nanoprotrusion induced by isolated impact of Ar cluster ion beam on Si and GaAs crystal

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 36-40

  Park, H S ^a   Jung, H J ^a   Jeong, K ^a   Choi, W K ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Cluster; Crater; Ion dose; Isolated cluster impact; Laval nozzle; Nanoprotrusion; Surface embossment; Surface etching; Surface roughness; Surface sputtering smoothing; Time of flight

Indexed keywords

ARGON; CRYSTALS; ETCHING; HEATING; NANOTECHNOLOGY; NOZZLES; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SPUTTERING; SURFACE ROUGHNESS;

CLUSTERS; CRATERS; ION DOSES; ISOLATED CLUSTER IMPACT; LAVAL NOZZLES; NANOPROTRUSION; SURFACE EMBOSSMENT; SURFACE ETCHING; SURFACE SPUTTERING/SMOOTHING; TIME-OF-FLIGHT;

ION BEAMS;

EID: 13444301201     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.07.031     Document Type: Conference Paper

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