-
1
-
-
4544286733
-
max, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
-
max, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability," in Symp. VLSI Technology Dig. Tech. Papers, 2004, pp. 98-99.
-
(2004)
Symp. VLSI Technology Dig. Tech. Papers
, pp. 98-99
-
-
Zamdmer, N.1
Kim, J.2
Trzcinski, R.3
Plochart, J.-O.4
Narasimha, S.5
Khare, M.6
Wagner, L.7
Chaloux, S.8
-
2
-
-
4344651640
-
Noise investigations of 90 nm VLSI CMOS technologies for analog integrated circuits at millimeter wave frequencies
-
May
-
F. Ellinger, M. Schmatz, and H. Jäckel, "Noise investigations of 90 nm VLSI CMOS technologies for analog integrated circuits at millimeter wave frequencies," in SPIE Conf. Noise and Fluctuations, May 2004, pp. 131-138.
-
(2004)
SPIE Conf. Noise and Fluctuations
, pp. 131-138
-
-
Ellinger, F.1
Schmatz, M.2
Jäckel, H.3
-
3
-
-
1642365005
-
26-42 GHz low noise amplifier MMIC fabricated on digital SOI CMOS technology
-
Mar.
-
F. Ellinger, "26-42 GHz low noise amplifier MMIC fabricated on digital SOI CMOS technology," IEEE J. Solid-State Circuits, vol. 39, no. 3, pp. 522-528, Mar. 2004.
-
(2004)
IEEE J. Solid-state Circuits
, vol.39
, Issue.3
, pp. 522-528
-
-
Ellinger, F.1
-
4
-
-
2542476092
-
30-40 GHz drain pumped passive down mixer MMIC fabricated on digital SOI CMOS technology
-
May
-
F. Ellinger, L. C. Rodoni, G. Sialm, C. Kromer, G. von Büren, M. Schmatz, C. Menolfi, T. Toifl, T. Morf, M. Kossel, and H. Jäckel, "30-40 GHz drain pumped passive down mixer MMIC fabricated on digital SOI CMOS technology," IEEE Trans. Microwave Theory Tech., vol. 52, no. 5, pp. 1382-1391, May 2004.
-
(2004)
IEEE Trans. Microwave Theory Tech.
, vol.52
, Issue.5
, pp. 1382-1391
-
-
Ellinger, F.1
Rodoni, L.C.2
Sialm, G.3
Kromer, C.4
Von Büren, G.5
Schmatz, M.6
Menolfi, C.7
Toifl, T.8
Morf, T.9
Kossel, M.10
Jäckel, H.11
-
5
-
-
4544384340
-
60 GHz VCO with high tuning range fabricated on VLSI SOI CMOS technology
-
Jun.
-
F. Ellinger, T. Morf, G. von Büren, C. Kromer, G. Sialm, L. Rodoni, M. Schmatz, and H. Jäckel, "60 GHz VCO with high tuning range fabricated on VLSI SOI CMOS technology," in IEEE MTT-S Microwave Symp. Dig., Jun. 2004, pp. 1329-1332.
-
(2004)
IEEE MTT-S Microwave Symp. Dig.
, pp. 1329-1332
-
-
Ellinger, F.1
Morf, T.2
Von Büren, G.3
Kromer, C.4
Sialm, G.5
Rodoni, L.6
Schmatz, M.7
Jäckel, H.8
-
6
-
-
12144290115
-
Ultra compact SOI CMOS frequency doubler MMIC for low power applications at 26.5-28.5 GHz
-
Feb.
-
F. Ellinger and H. Jäckel, "Ultra compact SOI CMOS frequency doubler MMIC for low power applications at 26.5-28.5 GHz," IEEE Microwave Compon. Lett., vol. 14, no. 2, pp. 53-55, Feb. 2004.
-
(2004)
IEEE Microwave Compon. Lett.
, vol.14
, Issue.2
, pp. 53-55
-
-
Ellinger, F.1
Jäckel, H.2
-
7
-
-
85008008540
-
Distributed integrated circuits: An alternative approach to high-frequency design
-
Feb.
-
A. Hajimiri, "Distributed integrated circuits: An alternative approach to high-frequency design," IEEE Commun. Mag., vol. 40, no. 2, pp. 168-173, Feb. 2002.
-
(2002)
IEEE Commun. Mag.
, vol.40
, Issue.2
, pp. 168-173
-
-
Hajimiri, A.1
-
8
-
-
0242527302
-
A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology
-
Sep.
-
J.-O. Plouchart, J. Kim, N. Zamdmer, L.-H. Lu, M. Sherony, Y. Tan, R. Groves, R. Trzcinski, M. Talbi, A. Ray, and L. Wagner, "A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology," in Proc. IEEE Custom Integrated Circuits Conf., Sep. 2003, pp. 159-162.
-
(2003)
Proc. IEEE Custom Integrated Circuits Conf.
, pp. 159-162
-
-
Plouchart, J.-O.1
Kim, J.2
Zamdmer, N.3
Lu, L.-H.4
Sherony, M.5
Tan, Y.6
Groves, R.7
Trzcinski, R.8
Talbi, M.9
Ray, A.10
Wagner, L.11
-
9
-
-
12144291125
-
High-Q inductors on digital VLSI CMOS substrate for analog RF applications
-
Sep.
-
F. Ellinger, M. Kossel, M. Huber, M. Schmatz, C. Kromer, G. Sialm, D. Barras, L. Rodoni, G. von Büren, and H. Jäckel, "High-Q inductors on digital VLSI CMOS substrate for analog RF applications," in IEEE Int. Microwave and Optoelectronics Conf., Sep. 2003, pp. 869-872.
-
(2003)
IEEE Int. Microwave and Optoelectronics Conf.
, pp. 869-872
-
-
Ellinger, F.1
Kossel, M.2
Huber, M.3
Schmatz, M.4
Kromer, C.5
Sialm, G.6
Barras, D.7
Rodoni, L.8
Von Büren, G.9
Jäckel, H.10
-
10
-
-
0035167759
-
A DC-45 GHz metamorphic HEMT traveling wave amplifier
-
R. E. Leoni III, S. J. Lichwala, J. G. Hunt, C. S. Whelan, P. F. Marsh, W. E. Hoke, and T. E. Kazior, "A DC-45 GHz metamorphic HEMT traveling wave amplifier," in Proc. IEEE GaAs Symp., 2001, pp. 133-136.
-
(2001)
Proc. IEEE GaAs Symp.
, pp. 133-136
-
-
Leoni III, R.E.1
Lichwala, S.J.2
Hunt, J.G.3
Whelan, C.S.4
Marsh, P.F.5
Hoke, W.E.6
Kazior, T.E.7
-
12
-
-
0032289734
-
80-GHz distributed amplifier with transferred substrate heterojunction bipolar transistors
-
Dec.
-
B. Agarwal, Q. Lee, D. Mensa, R. Pullela, J. Guthrie, and M. J. W. Rodwell, "80-GHz distributed amplifier with transferred substrate heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 46, no. 12, pp. 2302-2307, Dec. 1998.
-
(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, Issue.12
, pp. 2302-2307
-
-
Agarwal, B.1
Lee, Q.2
Mensa, D.3
Pullela, R.4
Guthrie, J.5
Rodwell, M.J.W.6
-
13
-
-
0032299220
-
112-GHz, 157 GHz, and 180-GHz InP HEMT traveling-wave amplifiers
-
Dec.
-
B. Agarwal, A. E. Schmitz, J. J. Brown, M. Matloubian, M. G. Case, M. Le, M. Lui, and M. J. W. Rodwell, "112-GHz, 157 GHz, and 180-GHz InP HEMT traveling-wave amplifiers," IEEE Trans. Microwave Theory Tech., vol. 46, no. 12, pp. 2553-2559, Dec. 1998.
-
(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, Issue.12
, pp. 2553-2559
-
-
Agarwal, B.1
Schmitz, A.E.2
Brown, J.J.3
Matloubian, M.4
Case, M.G.5
Le, M.6
Lui, M.7
Rodwell, M.J.W.8
-
14
-
-
0033899650
-
A fully integrated 0.5-5.5 GHz CMOS distributed amplifier
-
Feb.
-
B. Ballweber, R. Gupta, and D. Allstot, "A fully integrated 0.5-5.5 GHz CMOS distributed amplifier," IEEE J. Solid-State Circuits, vol. 35, no. 2, pp. 231-239, Feb. 2000.
-
(2000)
IEEE J. Solid-state Circuits
, vol.35
, Issue.2
, pp. 231-239
-
-
Ballweber, B.1
Gupta, R.2
Allstot, D.3
-
15
-
-
0036743926
-
Performance of 1-10-GHz traveling wave amplifiers in 0.18 μm CMOS
-
Sep.
-
B. M. Frank, P. Freundorfer, and Y. M. M. Antar, "Performance of 1-10-GHz traveling wave amplifiers in 0.18 μm CMOS," IEEE Microwave Compon. Lett., vol. 12, no. 9, pp. 327-329, Sep. 2002.
-
(2002)
IEEE Microwave Compon. Lett.
, vol.12
, Issue.9
, pp. 327-329
-
-
Frank, B.M.1
Freundorfer, P.2
Antar, Y.M.M.3
-
16
-
-
0035729108
-
A low-noise distributed amplifier using cascode-connected BJT's terminal circuit
-
Dec.
-
M. Kawashima, H. Hazashi, T. Nakagawa, and K. Araki, "A low-noise distributed amplifier using cascode-connected BJT's terminal circuit," in Proc. Asia Pacific Microwave Conf., Dec. 2001, pp. 21-24.
-
(2001)
Proc. Asia Pacific Microwave Conf.
, pp. 21-24
-
-
Kawashima, M.1
Hazashi, H.2
Nakagawa, T.3
Araki, K.4
-
17
-
-
0041589314
-
A 0.6-22-GHz broadband CMOS distributed amplifier
-
Philadelphia, PA, June
-
R.-C. Liu, K.-L. Deng, and H. Wang, "A 0.6-22-GHz broadband CMOS distributed amplifier," in Proc. IEEE Radio Frequency Integrated Symp., Philadelphia, PA, June 2003, pp. 103-106.
-
(2003)
Proc. IEEE Radio Frequency Integrated Symp.
, pp. 103-106
-
-
Liu, R.-C.1
Deng, K.-L.2
Wang, H.3
-
18
-
-
84897541205
-
SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond
-
Munich, Germany, Sep.
-
O. Wohlgemuth, P. Paschke, and Y. Baeyens, "SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond," in Proc. Eur. Microwave Conf., Munich, Germany, Sep. 2003, pp. 1087-1090.
-
(2003)
Proc. Eur. Microwave Conf.
, pp. 1087-1090
-
-
Wohlgemuth, O.1
Paschke, P.2
Baeyens, Y.3
-
19
-
-
0020152768
-
A monolithic GaAs 1-13-GHz traveling-wave amplifier
-
Jul.
-
Y. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, and R. A. Pucel, "A monolithic GaAs 1-13-GHz traveling-wave amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-30, no. 7, pp. 976-981, Jul. 1982.
-
(1982)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-30
, Issue.7
, pp. 976-981
-
-
Ayasli, Y.1
Mozzi, R.L.2
Vorhaus, J.L.3
Reynolds, L.D.4
Pucel, R.A.5
-
20
-
-
0022083986
-
The intrinsic noise figure of the MESFET distributed amplifier
-
Jun.
-
C. S. Aitchison, "The intrinsic noise figure of the MESFET distributed amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 6, pp. 460-466, Jun. 1985.
-
(1985)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-33
, Issue.6
, pp. 460-466
-
-
Aitchison, C.S.1
-
21
-
-
0031246727
-
An integrated CMOS distributed amplifier utilizing packaging inductances
-
Oct.
-
P. J. Sullivan, B. A. Xavier, and W. H. Ku, "An integrated CMOS distributed amplifier utilizing packaging inductances," IEEE Trans. Microwave Theory Tech., vol. 45, no. 10, pp. 1969-1976, Oct. 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.45
, Issue.10
, pp. 1969-1976
-
-
Sullivan, P.J.1
Xavier, B.A.2
Ku, W.H.3
-
22
-
-
0035369538
-
Concepts and methods in optimization of integrated LC VCOs
-
Jun.
-
D. Ham and A. Hajimiri, "Concepts and methods in optimization of integrated LC VCOs," IEEE J. Solid-State Circuits, vol. 36, no. 7, pp. 896-909, Jun. 2001.
-
(2001)
IEEE J. Solid-state Circuits
, vol.36
, Issue.7
, pp. 896-909
-
-
Ham, D.1
Hajimiri, A.2
-
23
-
-
0022811203
-
High-frequency noise measurements on FET's with small dimensions
-
Nov.
-
A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, no. 11, pp. 1801-1805, Nov. 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, Issue.11
, pp. 1801-1805
-
-
Abidi, A.A.1
|