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Volumn 46, Issue 12 PART 2, 1998, Pages 2302-2307

80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032289734     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.739215     Document Type: Article
Times cited : (17)

References (7)
  • 2
    • 0029354745 scopus 로고    scopus 로고
    • "0-90 GHz InAlAs/InGaAs/In HEMT distributed baseband amplifier 1C,"
    • vol. 31, pp 1430-1431, 1995.
    • S. Kimura, Y. Imai, and T. Enoki, "0-90 GHz InAlAs/InGaAs/In HEMT distributed baseband amplifier 1C," Electron. Lett., vol. 31, pp 1430-1431, 1995.
    • Electron. Lett.
    • Kimura, S.1    Imai, Y.2    Enoki, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.