Ultracompact SOI CMOS Frequency Doubler for Low Power Applications at 26.5-28.5 GHz

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 2, 2004, Pages 53-55

  Ellinger, Frank ^a   Jäckel, Heinz ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Complementary metal oxide semiconductor (CMOS); Frequency doubler; Microwave monolithic integrated circuit (MMIC); Silicon on insulator (SOI)

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; HARMONIC ANALYSIS; IMPEDANCE MATCHING (ACOUSTIC); MICROWAVES; MOSFET DEVICES; OPTIMIZATION; OSCILLATIONS; OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); FREQUENCY DOUBLER; MICROWAVE MONOLITHIC INTEGRATED CIRCUIT (MMIC); SILICON ON INSULATOR (SOI);

CMOS INTEGRATED CIRCUITS;

EID: 12144290115     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.822574     Document Type: Article

References (15)

1. J. M. C. Wong and H. C. Luong, "A 1.5-V 4-GHz dynamic-loading regenerative frequency doubler in a 0.35-μm CMOS process," in Proc. IEEE RFIC Symp., June 2002, pp. 463-466.
2. S. W. Chen, T. Ho, F. R. Phelles, J. L. Singer, K. Pande, P. Rice, J. Adair, and M. Gharemani, "A high-performance 94 GHz MMIC doubler," IEEE Microwave Guided Wave Lett., vol. 6, pp. 167-169, June 1993.
3. J. Papapolymerou, F. Brauchler, J. East, and L. P. B. Katehi, "W-band finite ground coplanar monolithic multipliers," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 614-619, May 1999.
4. Y. Kwon, D. Pavlidis, P. Marsh, G. I. Ng, and T. Brock, "180 GHz In-AlAs/InGaAs HEMT monolithic integrated frequency doubler," in IEEE GaAs IC Symp, Dig., June 1991, pp. 165-168.
5. V. Radisic, M. Micovic, M. Hu, P. Janke, C. Ngo, L. Nguyen, L. Samoska, and M. Morgan, "164-GHz MMIC HEMT doubler," IEEE Microwave Wireless Comp. Lett., vol. 11, pp. 241-243, June 2001.
6. A. Werthof, H. Tischler, and T. Grave, "High gain HEMT frequency doubler for 76 GHz automotive radar," in Proc. IEEE MTT-S Symp., June 2001, pp. 107-109.
7. H. Zirath, C. Fager, M. Garcia, P. Sakalas, L. Landen, and A. Alping, "Analog MMIC's for millimeter-wave applications based on a commercial 0.14-μm pHEMT technology," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 2086-2092, Nov. 2001.
8. Y. Shizuki, Y. Fuchida, K. Arai, and S. Watanabe, "A 12/24 GHz frequency doubler MMIC using resistive series feedback circuit," in Proc. IEEE MTT-S Symp., June 1999, pp. 307-310.
9. S. Hackl and J. Bock, "42 GHz active frequency doubler in SiGe bipolar technology," in Proc. Int. Conf. Microwave Technology, Aug. 2002, pp. 54-47.
10. F. Ellinger, M. Kossel, M. Huber, M. Schmatz, C. Kromer, G. Sialm, D. Barras, L. Rodoni, G. von Büren, and H. Jäckel, "High-Q inductors on digital VLSI CMOS substrate for analog RF applications," in Proc. IEEE/SBMO IMOC Conf., Sept. 2003, pp. 869-872.
11. N. Zamdmer, J. O. Plouchart, J. Kim, L.-H. Lu, S. Narasimha, P. A. O'Neil, A. Ray, M. Sherony, and L. Wagner, "Suitability of scaled SOI CMOS for high-frequency analog circuits," in Proc. ESSDERC Conf., Sept. 2002.
12. F. Ellinger, "26-42 GHz SOI CMOS low noise amplifier," IEEE J. Solid-State Circuits, to be published.
13. F. Ellinger, L. C. Rodoni, G. Sialm, C. Kromer, G. von Büren, M. Schmatz, C. Menolfi, T. Toifl, T. Morf, M. Kossel, and H. Jäckel, "30-40 GHz drain pumped passive down mixer MMIC fabricated on digital SOI CMOS technology," IEEE Trans. Microwave Theory Tech., to be published.
14. [Online]. Available: http://www-device.eecs.berkeley.edu/~bsimsoi/
15. F. Ellinger and W. Bächtold, "Compact and low power consuming frequency/phase multiplier MMIC's for wireless LAN at S-band and C-band," in Proc. Inst. Elect. Eng., vol. 150, June 2003.