Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0 0 0 1) surface and the initial growth of GaN and AlN

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 428-436

  Hartman, J D ^a   Naniwae, K ^b   Petrich, C ^b   Nemanich, R J ^b   Davis, R F ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Aluminum nitride; Gallium nitride; Molecular beam epitaxy; Photo emission electron microscopy; Silicon carbide; Stepped single crystal surfaces

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; ETCHING; HYDROGEN; LASERS; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON CARBIDE; SINGLE CRYSTALS; THIN FILMS;

GAN THIN FILMS; PHOTO-EMISSION ELECTRON MICROSCOPY; STEPPED SINGLE CRYSTAL SURFACES;

GALLIUM NITRIDE;

EID: 13444274710     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.021     Document Type: Article

References (18)

1. V.M. Torres, J.L. Edwards, B.J. Wilkens, D.J. Smith, R.B. Doak, and I.S.T. Tsong Appl. Phys. Lett. 74 1999 985
2. X.H. Wu, P. Fini, E.J. Tarsa, R. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, and J.S. Speck J. Cryst. Growth 189-190 1998 231
3. V. Van Elsbergen, T.U. Kampen, and W. Mönch Surf. Sci. 365 1996 443
4. R. Kaplan Amorphous and crystalline silicon carbide G.L. Harris C.Y.-W. Yang Springer Proceedings in Physics vol. 34 1989 100
5. U. Starke, J. Schardt, and M. Franke Appl. Phys. A A65 1997 587
6. M.C. Benjamin, Electronic properties of SiC and AlN surfaces and interfaces, Dissertation, North Carolina State University, 1997, p. 51.
7. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina, and E. Janzén J. Cryst. Growth 181 1997 241
8. F. Owman, C. Hallin, P. Mårtensson, and E. Janzén J. Cryst. Growth 167 1996 391
9. V. Ramachandran, M.F. Brady, A.R. Smith, R.M. Feenstra, and D.W. Greve J. Electron. Mater. 27 1998 308
10. C.D. Lee, R.M. Feenstra, O. Shigiltchoff, R.P. Devaty, and W.J. Choyke MRS Int. J. Nitride Semicond. Res. 7 2002 2
11. A. Pavlovska, E. Bauer, V.M. Torres, J.L. Edwards, R.B. Doak, I.S.T. Tsong, V. Ramachandran, and R.M. Feenstra J. Cryst. Growth 189-190 1998 310
12. V. Ramachandran, A.R. Smith, R.M. Feenstra, and D.W. Greve J. Vac. Technol. A 17 1999 1289
13. Z. Sitar, L.L. Smith, and R.F. Davis J. Cryst. Growth 141 1994 11
14. R.C. Glass, L.O. Kjellberg, V.F. Tsvetkov, J.E. Sundgren, and E. Janzén J. Cryst. Growth 132 1993 504
15. M.C. Benjamin, M.D. Bremser, T.W. Weeks Jr., S.W. King, R.F. Davis, and R.J. Nemanich Appl. Surf. Sci. 104-105 1996 455
16. M.C. Benjamin, R.F. Cheng Wang, R.J. Davis, and Nemanich Appl. Phys. Lett. 64 1994 3288
17. L. David CRC Handbook of Chemistry and Physics 1994 CRC Press 12 105
18. J.D. Hartman, A.M. Roskowski, Z.J. Reitmeier, K.M. Tracy, R.F. Davis, and R.J. Nemanich J. Vac. Sci. Technol. A 21 2003 394