Etching characteristics of Bi4-xLaxTi3O12 (BLT) in inductively coupled CF4/Ar plasma

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 912-917

  Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Bi1 xLaxTa9O12; Etching; ICP; OES

Indexed keywords

ARGON; CHEMICAL REACTIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; SPUTTERING;

CHIP ARCHITECTURE;

BISMUTH COMPOUNDS;

EID: 0037391725     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01020-1     Document Type: Conference Paper

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