Reduction in operating current of high-power 660 nm laser diodes using a transparent AlGaAs cap layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2559-2562

  Hiroyama, Ryoji ^a   Inoue, Daijiro ^a   Nomura, Yasuhiko ^a   Ueda, Yasuhiro ^a   Shono, Masayuki ^a   Sawada, Minoru ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

AIGalnP; AlGaAs cap layer; Aspect ratio; High power; Optical absorption

Indexed keywords

ASPECT RATIO; LIGHT ABSORPTION; SEMICONDUCTING ALUMINUM COMPOUNDS;

AIGALNP; ALGAAS CAP LAYER; OPTICAL CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 1342319612     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2559     Document Type: Article

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