Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1994, Pages 205-206

  Hiroyama, R ^a   Bessho, Y ^a   Kase, H ^a   Ikegami, T ^a   Honda, S ^a   Shono, M ^a   Yodoshi, K ^a   Yamaguchi, T ^a   Niina, T ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; TEMPERATURE;

MISORIENTED SUBSTRATES; QUANTUM BARRIER; STRAIN COMPENSATED MULTIPLE QUANTUM WELL LASER DIODES; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0028715182     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)