Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer

Electronics Letters

Volumn 36, Issue 15, 2000, Pages 1284-1286

  Honda, S ^a   Miyake, T ^a   Ikegami, T ^a   Yagi, K ^a   Bessho, Y ^a   Hiroyama, R ^a   Shono, M ^a   Sawada, M ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE LAYERS;

SEMICONDUCTOR LASERS;

EID: 0034224726     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000907     Document Type: Article

References (5)

1. KOBAYASHI, R., HOTTA, H., MIYASAKA, F., HARA, K., and KOBAYASHI, K.: 'Low threshold, high reliability 630nm band AlInP visible laser diodes with AlInP buried waveguide', Electron. Lett., 1996, 32, pp. 894-896
2. UETANI, T., HIROYAMA, R., SHONO, M., IBARAKl, A., YODOSHI, K., and NIINA, T.: 'Real-index-guided 630nm-band AlGaInP laser diodes with AlInP current blocking layer'. CLEO'96 Tech. Dig., Anahaim, CA, 1996, pp. 458-459
3. HIROYAMA, R., BESSHO, Y., KASE, H., IKEGAMI, T., HONDA, S., SHONO, M., YODOSHI, K., YAMAGUCHI, T., and NIINA, T.: 'Strain-compensated multiple quantum well 630nm laser diodes'. 14th IEEE Semiconductor Laser Conf., Maui, 1994, pp. 205-206
4. BESSYO, Y., UETANI, T., HIROYAMA, R., KOMEDA, K., SHONO, M., IBARAKI, A., YODOSHI, K., and NIINA, T.: 'Self-pulsating 630nm band strain-compensated MQW AlGaInP laser diodes', Electron. Lett., 1996, 32, pp. 667-668
5. HAMADA, H., HIROYAMA, R., HONDA, S., SHONO, M., YODOSHI, K., and YAMAGUCHI, T.: 'AlGaInP strained multiple-quantum-well visible laser diodes (λL ≤ 630nm band) with a multiquantum barrier grown on misoriented substrates', IEEE J. Quantum Electron., 1993, 29, pp. 1844-1850