High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 143-146

  Hiroyama, R ^a   Inoue, D ^a   Nomura, Y ^a   Shono, M ^a   Sawada, M ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BEAM DIVERGENCE;

SEMICONDUCTOR LASERS;

EID: 0034846282     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Highly reliable 60°C 50-mW operation of 650-nm band window-mirror laser diodes
2. 100-mW CW operation of 650- to 685-nm red lasers with window-mirror-structure
3. Low threshold, high reliability 630-nm band AlGaInP visible laser diodes with AlInP buried waveguide
4. Real-Index-guided 630nm-band AlGaInP laser diodes with AlInP current blocking layer
5. Low-operating-current, high-power 660nm laser diodes for DVD-RAM
6. Reduction in the operating current of high-power 660-nm AlGaInP laser diodes with an AlInP current blocking layer
7. AlGaInP visible laser diodes grown on misoriented substrates
8. AlGaInP strained multiple-quantum-well visible laser diodes (λ≤630 nm band) with multiquantum barrier grown on misoriented substrates
9. Strain-compensated multiple Quantum well 630nm laser diodes
10. Low threshold current 650 nm band refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer