Low-threshold 650nm band S3 laser diodes using tensile strained GaInAsP/AlGaInP MQW

Electronics Letters

Volumn 34, Issue 19, 1998, Pages 1855-1856

  Okada, N ^a   Anayama, C ^a   Sugiura, K ^a   Sekiguchi, H ^a   Furuya, A ^a   Tanahashi, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL DISK STORAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THRESHOLD VOLTAGE;

SELF-ALIGNED STEPPED SUBSTRATES; TENSILE STRAINED QUANTUM WELLS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0032163259     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981325     Document Type: Article

References (3)

1. VALSTER, A., VAN DER POEL, C.J., FINKE, M.N., and BOERMANS, M.J.B.: 'Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633nm'. Extended Abstract of 13th Semiconductor Laser Conf., Takamatsu, Japan, 1992, Paper G1, pp. 152-153
2. FURUYA, A., KONDO, M., and ANAYAMA, C: 'An AlGaInP visible laser diode', FUJITSU Scientific and Technical J., 1994, 30, pp. 162-170
3. TANAHASHI, T., FURUYA, A., ANAYAMA, C., and KONDO. M.: 'AlGaInP visible lasers grown by one-step MOVPE', Optoeleclonics-Devices and Technologies, 1994, 9, pp. 231-240