Real-index-guided 630-nm-band AlGaInP laser diode with AlInP current blocking layer

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 1996, Pages 458-459

  Uetani, T ^a   Hiroyama, R ^a   Shono, M ^a   Ibaraki, A ^a   Yodoshi, K ^a   Niina, T ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; LASER BEAMS; LIGHT ABSORPTION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

STRAIN COMPENSATED MULTIPLE QUANTUM WELL STRUCTURE; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0029701173     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)