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0028375330
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610-nm band AlGaInP single quantum well laser diode
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2
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0028715182
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Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes
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R. Hiroyama, Y. Bessho, H. Kase, T. Ikegami, S. Honda, M. Shono, K. Yodoshi, T. Yamaguchi, T. Niina, "Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes," in Dig. 14th IEEE Int. Semiconductor Laser Conf., 1994, pp. 205-206.
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Hiroyama, R.1
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3
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0029328096
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Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high-temperature and reliable operation
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June
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M. Watanabe, H. Matsuura, N. Shimada, and H. Okuda, "Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high-temperature and reliable operation," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 712-716, June 1995.
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Watanabe, M.1
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0028728745
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High efficiency visible single mode laser diodes
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Geels, R.1
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High-power visible semiconductor lasers
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R. Geels, D. Welch, D. Bour, D. Treat, and R. Bringans, "High-power visible semiconductor lasers," in SPIE Proc., Visible and UV Lasers, vol. 2115, 1994, pp. 250-261.
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Geels, R.1
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0028400898
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Comparison between tensile-strained AlGaInP SQW and MQW LD's emitting at 615 nm
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150 mW fundamental-transverse-mode operation of 670 nm window laser diode
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S. Arimoto, M. Yasuda, A. Shima, K. Kadoiwa, T. Kamizato, H. Watanabe, E. Omura, K. Ikeda, and S. Mitsui, "150 mW fundamental-transverse-mode operation of 670 nm window laser diode," IEEE J. Quantum Electron., vol. 29, pp. 1847-1879, June 1993.
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Arimoto, S.1
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8
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0028764410
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10000 h, 30-50 mW CW operation of 670-690 nm visible laser diodes
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A. Shima, H. Watanabe, H. Tada, S. Arimoto, T. Kamizato, K. Kadoiwa, E. Omura, and M. Otsubo, "10000 h, 30-50 mW CW operation of 670-690 nm visible laser diodes," Electron Lett., vol. 30, pp. 1293-1294, 1994.
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9
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0029702861
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Study of highly reliable 685 nm 50 mW visible lasers with Zn-diffused windows
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H. Tada, K. Harada, A. Shima, S. Yamamura, M. Kato, T. Motoda, Y. Nagai, K. Nagahama, M. Otsubo, and M. Aiga, "Study of highly reliable 685 nm 50 mW visible lasers with Zn-diffused windows," in SPIE Proc., Laser Diodes and Applications II, vol. 2682, 1996, pp. 116-124.
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Tada, H.1
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Nagahama, K.8
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