Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-Annealed Polysilicon by Rapid Energy Transfer Annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 B, 2003, Pages

  Jiang, Yeu Long ^a   Chen, Chi Lin ^b   Lin, Chiung Wei ^c   Huang, Shun Fa ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c TATUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon films; Implanted dopant phosphorus atoms; Laser annealed polysilicon films; Polysilicon films; Rapid energy transfer annealing

Indexed keywords

ANNEALING; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY TRANSFER; ION IMPLANTATION; LASER APPLICATIONS; LIQUID CRYSTAL DISPLAYS; THIN FILM TRANSISTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON FILMS; IMPLANTED DOPANT PHOSPHORUS ATOMS; LASER-ANNEALED POLSILICON FILMS; POLYSILICON FILMS; RAPID ENERGY TRANSFER ANNEALING;

POLYSILICON;

EID: 1342306075     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1498     Document Type: Article

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