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Volumn 22, Issue 2, 2001, Pages 86-88

New laser-processed polysilicon TFT architecture

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; GATES (TRANSISTOR); LASER APPLICATIONS; LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

EID: 0035250587     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902840     Document Type: Article
Times cited : (5)

References (8)
  • 1
    • 0000273348 scopus 로고
    • Polycrystalline silicon thin film transistors for liquid crystal displays
    • I.-W. Wu, "Polycrystalline silicon thin film transistors for liquid crystal displays," Solid State Phenom., vol. 37-38, pp. 553-564, 1994.
    • (1994) Solid State Phenom. , vol.37-38 , pp. 553-564
    • Wu, I.-W.1
  • 2
    • 0029326123 scopus 로고
    • Microelectron., 'Low temperature polysilicon TFT's: A comparison of solid phase and laser crystallization'
    • F. Plais et al., "Microelectron., 'Low temperature polysilicon TFT's: A comparison of solid phase and laser crystallization'," Microelectron. Eng., vol. 28, pp. 443-446, 1995.
    • (1995) Microelectron. Eng. , vol.28 , pp. 443-446
    • Plais, F.1
  • 3
    • 0000587615 scopus 로고
    • On-chip bottom-gate polysilicon and amorphous silicon thin-film transistors using excimer laser annealing
    • K. Shimizu, O. Sugiura, and M. Matsumura, "On-chip bottom-gate polysilicon and amorphous silicon thin-film transistors using excimer laser annealing," Jpn. J. Appl. Phys., vol. 29, pp. L1775-L1777, 1990.
    • (1990) Jpn. J. Appl. Phys. , vol.29
    • Shimizu, K.1    Sugiura, O.2    Matsumura, M.3
  • 4
    • 0002160997 scopus 로고
    • Cell design considerations for high-aperture-ratio direct-view and projection polysilicon TFT-LCD's
    • I.-W. Wu, "Cell design considerations for high-aperture-ratio direct-view and projection polysilicon TFT-LCD's," in SID Dig. Tech. Papers, 1995, pp. 19-22.
    • (1995) SID Dig. Tech. Papers , pp. 19-22
    • Wu, I.-W.1
  • 5
    • 0032051207 scopus 로고    scopus 로고
    • Laser processing of polysilicon thin-film transistors: Grain growth and device fabrication
    • J. B. Boyce, P. Mei, R. T. Fulks, and J. Ho, "Laser processing of polysilicon thin-film transistors: Grain growth and device fabrication," Phys. Stat. Solids A, vol. 166, pp. 729-741, 1998.
    • (1998) Phys. Stat. Solids A , vol.166 , pp. 729-741
    • Boyce, J.B.1    Mei, P.2    Fulks, R.T.3    Ho, J.4
  • 6
    • 0033080096 scopus 로고    scopus 로고
    • High-performance laser-processed polysilicon thin-film transistors
    • G. K. Giust, T. W. Sigmon, J. B. Boyce, and J. Ho, "High-performance laser-processed polysilicon thin-film transistors," IEEE Electron Device Lett., vol. 20, pp. 77-79, 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , pp. 77-79
    • Giust, G.K.1    Sigmon, T.W.2    Boyce, J.B.3    Ho, J.4
  • 8
    • 0343152266 scopus 로고    scopus 로고
    • The technology and applications of laser crystallised poly-TFTS
    • S. D. Brotherton et al., "The technology and applications of laser crystallised poly-TFTS," in Proc. ECS, Thin Film Transistor Technologies IV, 1998, pp. 98-122.
    • (1998) Proc. ECS, Thin Film Transistor Technologies IV , pp. 98-122
    • Brotherton, S.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.