Monolithically integrated p- & n- channel thin film transistors of nanocrystalline silicon on plastic substrates

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 703-708

  Cheng, I Chun ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOLE MOBILITY; LEAKAGE CURRENTS; MONOLITHIC INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASTICS; POLYIMIDES; SILICON; SUBSTRATES;

LOW-TEMPERATURE GATE DIELECTRIC; NANOCRYSTALLINE SILICON; PLASTIC SUBSTRATES; SILICON NANOBLOCKS;

THIN FILM TRANSISTORS;

EID: 12844257611     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a4.6     Document Type: Conference Paper

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