MOS interface properties and MOSFET performance on 4H-SiC{0001} and non-basal faces processed by N2O oxidation

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 199-204

  Kimoto, T ^a   Kanzaki, Y ^a   Noborio, M ^a   Kawano, H ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CONTAMINATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHANNEL MOBILITY; INTERFACE STRUCTURE; INTERFACES STATE DENSITY; THERMAL OXIDATION;

SILICON CARBIDE;

EID: 12844255919     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j8.2     Document Type: Conference Paper

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