Hall mobility of the electron inversion layer in 6H-SiC MOSFETs

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Saks, N S ^a   Mani, S S ^b,c   Agarwal, A K ^b,d   Hegde, V S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TRAPS; HALL EFFECT; INTERFACES (MATERIALS); SILICA; SILICON CARBIDE; TRANSCONDUCTANCE;

ELECTRON INVERSION LAYERS; FREE CARRIER DENSITY;

MOSFET DEVICES;

EID: 0033686386     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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