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Volumn 48, Issue 5, 2004, Pages 669-674

Extrinsic parameter extraction and RF modelling of CMOS

Author keywords

Non linear modelling; Parameter extraction; RF CMOS

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; EQUIVALENT CIRCUITS; FREQUENCY DOMAIN ANALYSIS; TIME DOMAIN ANALYSIS; TRANSCONDUCTANCE;

EID: 1242321278     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.012     Document Type: Article
Times cited : (8)

References (18)
  • 2
    • 0032140536 scopus 로고    scopus 로고
    • Extraction of high-frequency equivalent circuit parameters of submicron gate length MOSFET's
    • Sung R., Bendix P., Das M.B. Extraction of high-frequency equivalent circuit parameters of submicron gate length MOSFET's. IEEE Trans. Electron. Dev. 45(8):1998;1769-1775.
    • (1998) IEEE Trans. Electron. Dev. , vol.45 , Issue.8 , pp. 1769-1775
    • Sung, R.1    Bendix, P.2    Das, M.B.3
  • 3
  • 4
    • 0000552355 scopus 로고    scopus 로고
    • A simple subcircuit extension of the BSIM3v3 model for CMOS RF design
    • Tin S.F., Osaman, Asharaf A., Mayaram K., Hu C. A simple subcircuit extension of the BSIM3v3 model for CMOS RF design. IEEE J. Solid-State Circ. 35(4):2000;612-624.
    • (2000) IEEE J. Solid-state Circ. , vol.35 , Issue.4 , pp. 612-624
    • Tin, S.F.1    Osaman2    Asharaf, A.3    Mayaram, K.4    Hu, C.5
  • 5
    • 0031098333 scopus 로고    scopus 로고
    • A novel approach to extracting small-signal model parameters of silicon MOSFET's
    • Lee S., Yu H.K., Kim C.S., Koo J.G., Nam K.S. A novel approach to extracting small-signal model parameters of silicon MOSFET's. IEEE Microw. Guide. Wave Lett. 7(3):1997;75-77.
    • (1997) IEEE Microw. Guide. Wave Lett. , vol.7 , Issue.3 , pp. 75-77
    • Lee, S.1    Yu, H.K.2    Kim, C.S.3    Koo, J.G.4    Nam, K.S.5
  • 6
    • 0033221855 scopus 로고    scopus 로고
    • Accurate modelling and parameter extraction for MOS transistors valid up to 10 GHz
    • Jen S.H.M., Enz C.C., Pehlke D.R., Schroter M., Sheu B.J. Accurate modelling and parameter extraction for MOS transistors valid up to 10 GHz. IEEE Trans. Electron. Dev. 46(11):1999;2217-2226.
    • (1999) IEEE Trans. Electron. Dev. , vol.46 , Issue.11 , pp. 2217-2226
    • Jen, S.H.M.1    Enz, C.C.2    Pehlke, D.R.3    Schroter, M.4    Sheu, B.J.5
  • 7
    • 0032069642 scopus 로고    scopus 로고
    • Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modelling
    • Raskin J.P., Gillon R., Chen J., Janvier D.V., Colinge J.P. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modelling. IEEE Trans. Electron. Dev. 45(5):1998;1017-1025.
    • (1998) IEEE Trans. Electron. Dev. , vol.45 , Issue.5 , pp. 1017-1025
    • Raskin, J.P.1    Gillon, R.2    Chen, J.3    Janvier, D.V.4    Colinge, J.P.5
  • 8
    • 0036070378 scopus 로고    scopus 로고
    • Direct parameter extraction on RF CMOS
    • Pengg F.X. Direct parameter extraction on RF CMOS. IEEE MTT-S Dig. 2002;271-274.
    • (2002) IEEE MTT-S Dig. , pp. 271-274
    • Pengg, F.X.1
  • 9
    • 0034499762 scopus 로고    scopus 로고
    • On the high frequency characteristics of substrate resistance in RF MOSFETs
    • Cheng Y., Matloubin M. On the high frequency characteristics of substrate resistance in RF MOSFETs. IEEE Electron. Dev. Lett. 21(12):2000;604-606.
    • (2000) IEEE Electron. Dev. Lett. , vol.21 , Issue.12 , pp. 604-606
    • Cheng, Y.1    Matloubin, M.2
  • 10
    • 0032672529 scopus 로고    scopus 로고
    • Unique extraction of substrate parameters of common-source MOSFETs
    • Kim C.H., Kim C.S., Yu H.K., Nam K.S. Unique extraction of substrate parameters of common-source MOSFETs. IEEE Microw. Guide. Wave Lett. 9(3):2002;108-110.
    • (2002) IEEE Microw. Guide. Wave Lett. , vol.9 , Issue.3 , pp. 108-110
    • Kim, C.H.1    Kim, C.S.2    Yu, H.K.3    Nam, K.S.4
  • 11
    • 0036645960 scopus 로고    scopus 로고
    • A simple and accurate method for extracting substrate resistance of RF MOSFETs
    • Han J., Je M., Shin H. A simple and accurate method for extracting substrate resistance of RF MOSFETs. IEEE Electron. Dev. Lett. 23(7):2002;434-436.
    • (2002) IEEE Electron. Dev. Lett. , vol.23 , Issue.7 , pp. 434-436
    • Han, J.1    Je, M.2    Shin, H.3
  • 12
    • 0035395718 scopus 로고    scopus 로고
    • A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs
    • Lee S., Kim C.S., Yu H.K. A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs. IEEE Trans. Electron. Dev. 48(7):2001.
    • (2001) IEEE Trans. Electron. Dev. , vol.48 , Issue.7
    • Lee, S.1    Kim, C.S.2    Yu, H.K.3
  • 13
    • 0038483182 scopus 로고    scopus 로고
    • An MOS transistor model for RF design valid in all regions of operation
    • Enz C. An MOS transistor model for RF design valid in all regions of operation. IEEE Trans. Microw. Theory Tech. 50(1):2002;342-359.
    • (2002) IEEE Trans. Microw. Theory Tech. , vol.50 , Issue.1 , pp. 342-359
    • Enz, C.1
  • 14
    • 0036494335 scopus 로고    scopus 로고
    • High-frequency small signal AC and noise modelling of MOSFETs for RF IC design
    • Cheng Y., Chen C.H., Matloubian M., Deen M.J. High-frequency small signal AC and noise modelling of MOSFETs for RF IC design. IEEE Trans. Electron. Dev. 49(3):2002;400-408.
    • (2002) IEEE Trans. Electron. Dev. , vol.49 , Issue.3 , pp. 400-408
    • Cheng, Y.1    Chen, C.H.2    Matloubian, M.3    Deen, M.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.