Direct parameter extraction on RF-CMOS

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 271-274

  Pengg, Franz Xaver ^a  

^a CSEM   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; OPTIMIZATION;

ANALOG RADIO FREQUENCY CIRCUITS; SUBMICRON TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 0036070378     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A new method for determining the FET small-signal equivalent circuit
2. Broad-band determination of the FET small-signal equivalent circuit
3. A novel approach to extracting small-signal model parameters of silicon MOSFET's
4. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
5. Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's
6. Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz
7. A simple subcircuit extension of the BSIM3v3 model for CMOS RF design