메뉴 건너뛰기




Volumn 21, Issue 12, 2000, Pages 604-606

On the high-frequency characteristics of substrate resistance in RF MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC ADMITTANCE; ELECTRIC RESISTANCE; SUBSTRATES;

EID: 0034499762     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887480     Document Type: Article
Times cited : (59)

References (9)
  • 1
    • 84886447987 scopus 로고    scopus 로고
    • R. F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model
    • W. Liu et al., "R. F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model," in IEDM Tech. Dig., 1997, pp. 309-312.
    • (1997) IEDM Tech. Dig. , pp. 309-312
    • Liu, W.1
  • 3
    • 0033221855 scopus 로고    scopus 로고
    • Accurate modeling and parameter extraction for MOS transistor valid up to 10 GHz
    • S. H. Jen et al., "Accurate modeling and parameter extraction for MOS transistor valid up to 10 GHz," IEEE Trans. Electron Devices, vol. 46, pp. 2217-2227, 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 2217-2227
    • Jen, S.H.1
  • 4
    • 0031637702 scopus 로고    scopus 로고
    • High frequency application of MOS compact models and their development for scalable RF model libraries
    • May
    • D. Pehlke et al., "High frequency application of MOS compact models and their development for scalable RF model libraries," in Proc. IEEE Custom Integrated Circuit Conf., May 1998, pp. 219-222.
    • (1998) Proc. IEEE Custom Integrated Circuit Conf. , pp. 219-222
    • Pehlke, D.1
  • 5
    • 0031630376 scopus 로고    scopus 로고
    • CMOS RF modeling for GHz communication IC's
    • June
    • J. Ou et al., "CMOS RF Modeling for GHz Communication IC's," in Symp. VLSI Technology Dig. Tech. Papers, June 1998, pp. 94-95.
    • (1998) Symp. VLSI Technology Dig. Tech. Papers , pp. 94-95
    • Ou, J.1
  • 7
    • 0343395565 scopus 로고    scopus 로고
    • BC35-a 0.35 μm BICMOS technology for RFIC
    • Anaheim, CA, June
    • M. Rancanelli et al., "BC35-a 0.35 μm BICMOS technology for RFIC," in Proc. MTT, Anaheim, CA, June 1999.
    • (1999) Proc. MTT
    • Rancanelli, M.1
  • 9
    • 0033879027 scopus 로고    scopus 로고
    • MOS transistor modeling for RF IC design
    • C. Enz and Y. Cheng, "MOS Transistor modeling for RF IC design," IEEE J. Solid-State Circuits, vol. 35, pp. 186-201, 2000.
    • (2000) IEEE J. Solid-state Circuits , vol.35 , pp. 186-201
    • Enz, C.1    Cheng, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.