Extraction of High-Frequency equivalent circuit parameters of submicron gate-length mosfet's

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1769-1775

  Sung, Roberto ^a   Bendix, Peter ^a   Das, Mukunda B ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; IMPEDANCE MATCHING (ELECTRIC);

CIRCUIT SIMULATION; SPICE MODELS;

MOSFET DEVICES;

EID: 0032140536     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704377     Document Type: Article

References (15)

1. J. R. Burns, "High-frequency characteristics of the insulated-gate fieldeffect transistor," RCA Review, pp. 385-4118, 1967.
2. M. B. Das, "High-frequency network properties of MOS transistors including the substrate resistivity effects," IEEE Trans. Electron Devices, vol. ED-16, pp. 1049-1069, Dec. 1969.
3. P. J. V. Vandeloo, "Modeling of the MOS transistor for high frequency analog design," IEEE Trans. Computer-Aided Design, vol. 7, pp. 713-722, July 1989.
4. L. W. Nagel, "SPICE2: A computer program to simulate semiconductor circuits," Memo. ERL-M520, Univ. of California, Berkeley, 1975.
5. S. T. Fu, S. M. J. Liu, and M. B. Das, "Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors," IEEE Trans. Electron Devices, vol. 37, pp. 888-901, 1990.
6. R. Sung and M. B. Das, "Extraction of dynamic characteristics of 2-D electron gas in heterostructure field-effect transistors," Semiconductor Characterization: Present Status and Future Needs. Washington, DC: AIP, 1996, pp. 693-697.
7. D. H. Treleaven and F. N. Trofimenkoff, "MOSFET equivalent circuit at pinchoff," Proc. IEEE, vol. 54, pp. 1223-1224, Sept. 1966.
8. H. Johnson, "A high-frequency representation of the MOS transistor," Proc. IEEE Lett., vol. 54, pp. 1970-1971, Dec. 1966.
9. M. B. Das, "Generalized high-frequency network theory of field-effect transistors," Proc. IEE, vol. 114, pp. 50-59, Jan. 1967.
10. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, June 1988.
11. M. S. Ghausi and J. J. Kelly, Introduction to Distributed-Parameter Networks with Application to Integrated Circuits. New York: Holt, Rinehart, and Winston, 1968.
12. B. Redley and F. N. Trufimenkoff, "FET high-frequency analysis," Proc. IEE, vol. 113, pp. 1755-1762, Nov. 1966, also see D. H. Treleaven and F. N. Trofimenkoff, "MOSFET equivalent circuit at pinchoff," Proc. IEEE, vol. 54, pp. 1223-1224, Sept. 1966.
13. M. B. Das, "HEMT device physics and models," in HEMT's and HBT's: Devices, Fabrication, and Circuits, F. Ali and A. Gupta, Eds. Norwood, MA: Artech House, ch. 2, pp. 11-75, 1991.
14. Millimeter-wave performance of ultrasubmicrometer-gate fieldeffect transistors: A comparison of MODFET, MESFET, and PBT structures," IEEE Trans. Electron Devices, vol. ED-34, p. 1429, July 1987.
15. R. R. J. Vanoppen, J. A. M. Geelen, and D. B. M. Klaassen, "The highfrequency analogue performance of MOSFET's," in Proc. IEDM, 1994, pp. 173-176.