Silicon-germanium

IEEE Potentials

Volumn 18, Issue 2, 1999, Pages 17-19

  Krol, Edward J ^a  

^a LOYOLA MARYMOUNT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMMUNICATION CHANNELS (INFORMATION THEORY); DIGITAL TO ANALOG CONVERSION; ENERGY GAP; FIELD EFFECT TRANSISTORS; LATTICE CONSTANTS; MICROPROCESSOR CHIPS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TELECOMMUNICATION EQUIPMENT;

SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033114981     PISSN: 02786648     EISSN: None     Source Type: Journal    
DOI: 10.1109/45.755847     Document Type: Article

References (9)

1. Hutheesing, Nikhil, "Faster, cheaper, better-forever," Forbes, pp. 174-178, 7 July 1997.
2. Meyerson, Bernard S., "High-Speed Silicon-Germanium Electronics," Scientific American, pp. 62-67, March 1994.
3. Sapoval B. and Hermann, C., Physics of Semiconductors, Springer-Verlag Inc., New York, 1995.
4. Stix, Gary, "Material Advantage," Scientific American, pp. 146-147, Jan. '94.
5. "Cheaper, Faster Chips," 15 April 1998, .
6. "IBM and Hughes announce multiyear agreement to offer next generation communications product," .
7. "Silicon Germanium," 20 April 1998, .
8. "Wide Bandgap Semiconductors," 21 April 1998, lt;http://www.epitronics. com/wideband.html>.
9. "3.0 Diffusion," 20 April 1998, .