Modulated beam growth method for MBE grown GaN layers

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 400-405

  Liu, K T ^a   Tezuka, T ^b   Sugita, S ^b   Watari, Y ^b   Horikoshi, Y ^b   Su, Y K ^a   Chang, S J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Reflection high energy electron diffraction; A1. Scanning electron microscope; A1. X ray diffraction; A3. Modulated beam growth; A3. RF plasma assisted molecular beam epitaxy; A3. Stoichiometric growth; B1. Ga enrich; B1. N enrich

Indexed keywords

GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; LIGHT EMITTING DIODES; LIGHT MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACES; X RAY POWDER DIFFRACTION;

GA-ENRICH; MODULATED BEAM GROWTH; N-ENRICH; RF PLASMA ASSISTED MOLECULAR BEAM EPITAXY; STOICHIOMETRIC GROWTH;

MOLECULAR BEAM EPITAXY;

EID: 1242308832     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.100     Document Type: Article

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