Electron irradiation effects on photoconductive semiconductor switches (PCSSS) used in sub-nanosecond transient generators

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1722-1727

  Islam, N B ^a   Schamiloglu, E ^a   Kirby, T H ^a   Shipley, B ^a   Kemp, W T ^b   Schoenberg, J S H ^b   Howard, J W ^b  

^a MSC01 1070   (United States)

^b UNIVERSITY OF NEW MEXICO HEALTH SCIENCES CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLD-OFF VOLTAGE; LIQUID ENCAPSULATED CZOCHRALSKI PROCESS; NONIONIZING ENERGY LOSS PROCESS; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; RISE TIME; TRANSIENT GENERATORS;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; PHOTOCONDUCTING DEVICES; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SWITCHES; THRESHOLD VOLTAGE;

ELECTRON IRRADIATION;

EID: 0033315051     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819145     Document Type: Article

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