Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2289-2294

  Park, Dae Gyu ^a   Cha, Tae Ho ^a   Lee, Sang Hyeob ^a,c   Yeo, In Seok ^a   Park, Jin Won ^a   Kim, Sam Dong ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Dongguk University   (South Korea)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR METAL CAPACITOR; STORAGE NODE ELECTRODE BARRIERS; TITANIUM ALUMINUM NITRIDE;

ANNEALING; DEGRADATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; OXIDATION RESISTANCE; PLASTIC DEFORMATION; SPUTTER DEPOSITION; TEXTURES; THERMAL EFFECTS;

TITANIUM COMPOUNDS;

EID: 0035519471     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1421567     Document Type: Article

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