SEE Characterization of Vertical DMOSFETs: An Updated Test Protocol

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2341-2351

  Titus, Jeffrey L ^a   Wheatley, C Frank ^b  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b NONE

Author keywords

30 to 1000 V; Critical ion energy, energy response; Ion energy model; MOSFETs; Penetration depth; Single event burnout (SEB); Single event gate rupture (SEGR); Worst case criteria

Indexed keywords

CODES (SYMBOLS); ELECTRIC BREAKDOWN; HEAVY IONS; IRRADIATION; MATHEMATICAL MODELS; MOSFET DEVICES; SPACE RESEARCH;

30 TO 1000 V; CRITICAL ION ENERGY; ENERGY RESPONSE; ION ENERGY MODEL; PENETRATION DEPTH; SINGLE EVENT BURNOUT (SEB); SINGLE EVENT GATE RUPTURE (SEGR); WORST CASE CRITERIA;

RADIATION EFFECTS;

EID: 1242265194     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820733     Document Type: Conference Paper

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