Atomic structure of the interface between silicon (111) and amorphous germanium

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-12

  Borgardt, N I ^a,c   Plikat, B ^a,d   Schroter W ^a   Seibt, M ^a   Wagner, Th ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; FOURIER ANALYSIS; IMAGE ANALYSIS; MATHEMATICAL ANALYSIS; PHYSICAL PHASE; PHYSICOCHEMICAL MODEL;

EID: 12344328239     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195307     Document Type: Article

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